Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices
نویسندگان
چکیده
منابع مشابه
Interface roughness effects on transport in tunnel structures
Direct simulations of interface roughness effects on transport properties of tunnel structures are performed using the planar supercell stack method. The method allows for the inclusion of realistic three-dimensional rough interfacial geometries in transport calculations. For double barrier resonant tunneling structures, we used our method to analyze the effect of roughness at each of the four ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2015
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4936962